低介電材料及製程技術
Low-K Materials and Processing Technologies
| 節 | 週二 |
|---|---|
1 08:00–08:50 | 低介電材料及製程技術 EF202（光復） 3 節連堂 |
2 09:00–09:50 | |
3 10:10–11:00 |
* 根據陽明交大上課時間表所列
This is a unique course covering the fundamental material design, its applications and problem solving. This course is intended for graduate and senior students who have background in semiconductor processing, chemistry and physics. Major topics include: (1) RC delay in interconnects, (2) low-dielectric constant materials, (3)characterization and structure-property, (4) key processing modules such as patterning, metallization and CMP, (5) ALD technology, (6) far-backend, (7) die/package interactions and reliability, and (8) future challenges. 目標: 1. 瞭解介電材料在後段連接(Interconnects)之角色, 其物化特性,製程技術及整合 2. 瞭解介電材料front-end gate dielectrics之角色, 其物化特性,製程技術及整合 3. 後段連接製程技術 4. 藉由實例討論及分組專題製作,增進團隊分工合作素養, 以應付未來產業的挑戰 5. 輔助未來相關就業之準備 This course is offered in English. To balance students' needs, Chinese will be supplemented on as-needed basis. Note: 1. This course is recognized by NDL (Nano-Device Labs) as the prerequisite to use its facility. 2. The lecture notes have been updated to reflect the latest 14 nm technology. Double patterning, EUV, dual hardmask and metal hardmask integration schemes, extreme low-k, air-gap, self-forming-barrier, metal cap, fan-out wafer level package have been updated and added this year.
None This course is offered in English
無備註
助教 (Teaching Assistant): Wei-Yuan Chang (EF702) ext. 55396
No exam. 7 assigned homework (70%) (1-2 students are invited to present their homework and discussion) Final team project assignment: 30% (Presentation and report) Note: 1 Report should follow the format of J. of Applied Physics Note:2. Presentation is graded by peer (50%) and instructor (50%). with a forced distribution. Note 3 10 minutes lecture on Ethics in Science and Engineering is planned for this course in the opening session
Backend interconnect and device technology
RC delay in interconnects, options to solve RC delays
- 講授：
- 3
- 實作：
- 1.5
備註：reading key papers after class
Low k materials
1. Dielectric materials 2. Si-based materials 3. polymer-based materials 4. Etch-stop and passivation
- 講授：
- 12
- 實作：
- 4.5
characterization and structure-property
1. Properties and Requirements 2. Characterization techniques
- 講授：
- 6
- 實作：
- 1.5
- 其他：
- 3
備註：口頭報告 oral presentation
Processing Technologies
1. Litho 2. Etch and Clean 3. Metallization 4. CMP
- 講授：
- 12
- 實作：
- 3
Emerging ALD technology
ALD
- 講授：
- 3
Futuristic interconnect technology
Porous low-k, 3-D, aig-gap
- 講授：
- 3
- 其他：
- 3
備註：oral presentation
High-k dielectrics
Front-end gate technology
- 講授：
- 3
| 週次 | 主題 |
|---|---|
| 第 1 週 | Overview of Backend Interconnects 9/12(二) ABC-EF202 |
| 第 2 週 | Class will be re-scheduled 2017/9/19 (二)ABC-EF202 |
| 第 3 週 | Overview on Interconnect Delay and Technology Options 2017/9/26 (二)ABC-EF202 |
| 第 4 週 | Low-k Dielectric Materials: Properties and Requirements Fundamentals of Dielectrics 2017/10/3 (二)ABC-EF202 |
| 第 5 週 | National Holiday 2017/10/10(二)ABC-EF202 |
| 第 6 週 | Si-based Dielectric Materials – 1 2017/10/17(二)ABC-EF202 |
| 第 7 週 | Si-based and Polymeric Dielectric Materials 2017/10/24(二)ABC-EF202 |
| 第 8 週 | Characterization of low-k materials 2017/10/31(二)ABC-EF202 |
| 第 9 週 | Presentation/Discussion Homework assignment 2017/11/7 (二)ABC-EF202 |
| 第 10 週 | Etch Stop and Passivation Dielectrics / Integration 2017/11/14(二)ABC - EF202 |
| 第 11 週 | Module - Lithography 2017/11/21(二)ABC-EF202 |
| 第 12 週 | Modules - Etch/Clean Technology 2017/11/28(二)ABC-EF202 |
| 第 13 週 | Students' Presentation on Characterization Techniques 2017/12/5 (二)ABC-EF202 |
| 第 14 週 | Modules – Metallization (Thin film/ALD, CMP.) 2017/12/12(二)ABC-EF202 |
| 第 15 週 | Chemical-mechanical polish (CMP) 2017/12/19(二)ABC-EF202 |
| 第 16 週 | Futuristic technologies for Interconnects, Materials Options and Challenges 2017/12/26(二)ABC EF202 |
| 第 17 週 | - Materials and integration Options/Porous low-k dielectrics 2018/1/2 (二)ABC-EF202 |
| 第 18 週 | Final Presentation 2018/1/9 (二)ABC-EF202 |
Textbook: Advanced Interconnects for ULSI Technology, Edited by M.R. Baklanov, P.S. Ho, and E. Zschech, Wiley & Son, United Kingdom (2012) References: 1. Interlayer Dielectrics for Semiconductor Technologies, Eds. By S. P. Muraka, M. Eizenberg, and A.K. Sinha, Academic Press (2004) 2. Dielectric Films for Advanced Microelectronics, Eds. by Mikhail Baklanov, Karen Maex, Martin Green, John Wiley & Sons, New York (2007) 3. Silicon VLSI Technology: Fundamentals, Practice and Modeling, J.D. Plummer, M. D. Deal and P.B. Griffin, Prentice Hall, New Jersey (2000) 4. S.O. Kasap, Principles of Electronic Materials and Devices, The McGraw-Hill Company, 3rd Edition (International Edition), Singapore (2006) 5. Low Dielectric Constant Materials for IC Applications, Eds. by P.S. Ho, J. Leu and W.W. Lee, Springer Verlag (2003) 6. Class notes and literatures relevant to low-k technologies
- 地點
- EF316
- 時間
- Mondays 2-3 pm
- 聯絡方式
- (03) 5131420