矽奈米元件及物理
Silicon Nanometer Devices and Physics
| 節 | 週二 | 週四 |
|---|---|---|
4 11:10–12:00 | 矽奈米元件及物理 EDB27（光復） | |
7 15:30–16:20 | 矽奈米元件及物理 EDB27（光復） 2 節連堂 | |
8 16:30–17:20 |
* 根據陽明交大上課時間表所列
Introduce students to the silicon-based nano devices of today and tomorrow.
半導體元件物理 (Undergraduate Level)
無備註
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教師未提供此項資料
Introduction
e.g., ITRS and technology scaling, review of MOS capacitor, etc.
Quantitative Analysis for MOS Capacitor
e.g., surface potential based model, quantum-mechanical effect, impact of interface traps, etc.
Long-Channel MOSFETs
e.g., front-gate and back-gate, mechanism of current saturation, channel mobility, etc.
Short-Channel MOSFETs
e.g., carrier velocity saturation, strained-Si, ballistic transport, subthreshold leakage and DIBL, etc.
MOSFET Scaling & Design
e.g., quasi-2D analysis, vertical scaling, channel non-uniform doping profiles, etc.
SOI and FinFET
e.g., partially-depleted SOI, fully-depleted SOI, ultra-thin-body SOI, multi-gate devices, FinFET, etc.
Other Topics
e.g., output conductance, random variations, etc.
教師未提供此項資料
1. Handouts & Class Notes. 2. Fundamentals of Modern VLSI Devices, Taur and Ning, Cambridge University Press, 2nd Edition, 2009. 3. Modern semiconductor devices for integrated circuits, Chenming Calvin Hu, Pearson, 2010.
- 地點
- 工程四館531室
- 時間
- By appointment.
- 聯絡方式
- 分機54142 E-mail: pinsu@faculty.nctu.edu.tw