光電半導體物理與元件

This course aims to help students to master the core knowledge of the physics of semiconductor devices and materials. The topics will cover the structures and properties of common semiconductor crystals, thermal equilibrium properties of semiconductor materials, charge transport behaviors and nonequilibrium excess carrier dynamics, and device physics of pn junction, photodetector, photovoltaics, LED and lasers, etc.. Students are requested to write Matlab scripts, use a crystal builder, and master a 1-D device simulator in order to complete homework and design a solar cell device.

Applied Mathematics

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www.jyhuang.idv.tw

Homeworks: 5 (50%) Final (40%) Onsite Q&A (10%)

• The Crystal Structure of Solids

  1. Describe three classifications of solids—amorphous, polycrystalline, and single crystal. 2. Discuss the concept of a unit cell. 3. Describe three simple crystal structures and determine the volume and surface density of atoms in each structure. 4. Describe the diamond crystal structure. 5. Briefly discuss several methods of forming single-crystal semiconductor materials.

  講授：

  3

• Introduction to the QuantumTheory of Solids

  1. Apply QM to describe the behaviors of electrons in a crystal. 2. Develop the concept of allowed and forbidden electron energy bands in a single-crystal material. 3. Describe conduction and valence energy bands in a semiconductor material. Discuss the concept of negatively charged electrons and positively charged holes as two distinct charge carriers in a semiconductor material. 4. Develop electron energy versus momentum curves in a single-crystal material. 5. Discuss the concept of effective mass of an electron and a hole in a crystal. 6. Derive the density of states (DOS) in the allowed energy bands. 7. Develop the Fermi-Dirac probability function, which describes the statistical distribution of electrons among the allowed energy levels, and define the Fermi energy level.

  講授：

  3

• The Semiconductor in Equilibrium

  1. Derive the thermal-equilibrium concentrations of electrons and holes in a semiconductor as a function of the Fermi energy. 2. Discuss the process by which the properties of a semiconductor material can be altered by adding specific impurities to the semiconductor. 3. Determine the thermal-equilibrium concentrations of electrons and holes in a semiconductor as a function of the concentration of dopant added to the semiconductor. 4. Determine the position of the Fermi energy level as a function of the concentrations of dopant added to the semiconductor.

  講授：

  3

• CARRIER TRANSPORT PHENOMENA

  1. Carrier drift: mobility, conductivity and velocity saturation 2. Carrier Diffusion: diffusion current density, total current density 3. The Einstein relation

  講授：

  3

• Nonequilibrium Semiconductors

  Excess carrier behavior in semiconductor devices

  講授：

  6

• Optical Absorption and Generation Properties of Semiconductors

  講授：

  3

• PN Junction

  講授：

  3

• Photodetectors

  講授：

  3

• pin solar cell

  講授：

  3

• LED and Semiconductor Laser Diode

  講授：

  3

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時間

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聯絡方式

jyhuang@faculty.nctu.edu.tw