半導體元件及應用特論
Special Topics on Semiconductor Devices and Applications
| 節 | 週一 | 週二 |
|---|---|---|
2 09:00–09:50 | 半導體元件及應用特論 ES101（光復） 2 節連堂 | |
3 10:10–11:00 | ||
6 14:20–15:10 | 半導體元件及應用特論 ES101（光復） 2 節連堂 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
Compound semiconductor devices are the backbone of many advanced wireless communication systems and have raised considerable amount of attention in terms of research and development activities. In this course, we will invite speakers who are experts in the field from overseas to give the students an overall knowledge about the device and applications of semiconductors.
Physics, Solid-state Device Physics
無備註
N/A
attendance: 50% report: 50%
教師未提供此項資料
| 週次 | 主題 |
|---|---|
| 第 1 週 | Course Regulation/ |
| 第 2 週 | Basic Circuit Design Approaches for RF/Microwave High Power Amplifiers |
| 第 3 週 | Semiconductor Devices for Memory Applications(I) |
| 第 4 週 | Semiconductor Devices for Memory Applications(II) |
| 第 5 週 | Biomedical Applications for Semiconductor Devices |
| 第 6 週 | GaN Devices for Power Electronic Applications |
| 第 7 週 | GaN Devices for Power Electronic Applications |
| 第 8 週 | GaN Devices for Power Electronic Applications |
| 第 9 週 | GaN Devices for Power Electronic Applications |
| 第 10 週 | GaN Devices for Power Electronic Applications |
| 第 11 週 | GaN Devices for Power Electronic Applications |
| 第 12 週 | VLSI Technology |
| 第 13 週 | VLSI Technology |
| 第 14 週 | Power Devices: pn diodes, thrysistor, MOSFET, IGBT, WBG |
| 第 15 週 | Power Devices: pn diodes, thrysistor, MOSFET, IGBT, WBG |
| 第 16 週 | MOS Interfaces |
| 第 17 週 | Schottky Interfaces |
| 第 18 週 | Semiconductor Fabrication Process |
none
- 地點
- EE126A
- 時間
- by appointment
- 聯絡方式
- through email