半導體元件物理

This course provides a foundation for understanding the underlying physics and operation principles of several key solid state electronic devices.

General Physics

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助教聯絡方式: ED308 (ext. 54216)

Midterm, Final, Class Participation

• Electron and Holes in Semiconductors

  Silicon Crystal Structure, Bond Model, Energy band Model, Electrons and Holes, Density of States, Fermi Function, Electron and Hole Concentrations, etc.

• Transport and Recombination of Electrons and Holes

  Thermal Motion, Drift, Diffusion, Recombination and Excess Carriers, Thermal Generation, etc.

• PN Junction and Others

  PN Junction Theory, Depletion Approximation, PN Junction under Reverse Bias, PN Junction under Forward Bias, Concept of Charge Storage, Metal-Semiconductor Junction, etc.

• Bipolar Transistor

  Introduction, Collector Current, Base Current, Current Gain, Base-Width Modulation, etc.

• MOS Transistor

  Introduction to CMOS, Inversion Charges in MOSFET, Basic MOSFET I-V Model, Mechanism of Current Saturation, Subthreshold Characteristics, etc.

• MOS Capacitor

  Flat-Band Condition, Accumulation, Depletion, Threshold Condition and Threshold Voltage, Strong Inversion, MOS C-V Characteristics, etc.

Handouts and Class Notes. Text Books: C. Hu, "Modern Semiconductor Devices for Integrated Circuits", 2010 B. G. Streetman and S. K. Banerjee, “Solid State Electronic Devices”, Sixth Edition

地點

ED531

時間

教師未提供此項資料

聯絡方式

pinsu@faculty.nctu.edu.tw 03-5712121 ext.54142