電子元件模擬及量子-ATK軟體操件
Simulation of Electronic Devices and Basics of Quantum ATK
| 節 | 週五 |
|---|---|
5 13:20–14:10 | 電子元件模擬及量子-ATK軟體操件 EE116（光復） 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
The course corresponds to the physics simulation for macro- and nano-scale electronic devices, its resistive/conductive properties, bandstructures of the materials. The course includes different non-magnetic (e.g. ferroelectric) and magnetic (e.g. magnetic tunnel junctions) well as semiconductors electronic devices. The seminars and homework will include elements of a structure's modeling and programming using Wolfram Mathematica and Quantum ATK (Similar to TCAD from Synopsys) tools.
To teach students to understand physics and programming of the nano-scale devices. The seminars and homework will include elements of a structure's modeling and programming using Wolfram Mathematica and Quantum ATK (Similar to TCAD from Synopsys) tools.
無備註
Lectures and seminars for practice of programming. Remote access for server with Quantum ATK.
1. Exams and Quizzes: 20% 2. Homework: 40% 3. Participation 40%. 4. Bonus 10% (personal activity)
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| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction: Quantum Mechanics, basics of Solid State physics. 09/18 |
| 第 2 週 | Properties of the low dimensional systems. Important length scale. Characterization of materials and geometry for nano scale devices.. 9/25 |
| 第 3 週 | Electron transport in nano-scale devices: lecture and seminar; Simulation of electron transport (part 1). 10/2 |
| 第 4 週 | Electron transport in nano-scale devices: lecture and seminar; Simulation of electron transport (part 2). 10/9 |
| 第 5 週 | Spintronic devices. Non-volatile memory MRAM. Electron transport in magnetic tunnel junctions. (Lecture) 10/16 |
| 第 6 週 | Spintronic devices. Electron transport in magnetic tunnel junctions. (Seminar-practice of programming). IC design for magnetic tunnel junctions (MTJs) in Cadence Virtuoso. 10/23 |
| 第 7 週 | Basics for semiconductor ferroelectric devices. E-field control of the resistance. Programming in Wolfram Mathematica 10/30 |
| 第 8 週 | Seminar: simulation of I-V curves of a complicated nano scale devices. 11/6 |
| 第 9 週 | Middle term exam. 11/13 |
| 第 10 週 | Introduction. Examples of Quantum ATK applications. Basic working principals. 11/20 |
| 第 11 週 | An important aspects of the formalism in Q-ATK for simulating device systems using the non-equilibrium Greens function (NEGF) method. 11/27 |
| 第 12 週 | The description of control windows in Quantum ATK. Practice: Builder, Scrip activations and Job run. 12/4 |
| 第 13 週 | Density of state simulation. I-V curve simulation with/ without an external Gate. Model of transistor. 12/11 |
| 第 14 週 | Homework review and practical seminar. Consideration of examples. 12/18 |
| 第 15 週 | Spin transport in MTJs, Graphene-Nickel interface, Silicon p-n junction simulations. 12/25 |
| 第 16 週 | Building a molecular point-like junction 1/1 |
| 第 17 週 | Advanced device relaxation - manual workflow. Determination of low strain interfaces via geometric matching. 1/8 |
| 第 18 週 | Homework review and Final Exam. 1/15 |
1) Victor E. Borisenko and Stefano Ossicini. What is What in the Nanoworld, A Handbook on Nanoscience and Nanotechnology (Wiley-VCH Verlag & Co. KGaA, 2012) ePDF ISBN: 978-3-527-64839-9 2) E. Tsymbal et.al. Handbook-of-Spin-Transport-and-Magnetism (2-d edition, 2019), https://doi.org/10.1201/9780429441189 3) online resources: https://quantumwise.com/documents/manuals/ATK-2016/ReferenceManual/index.html https://docs.quantumatk.com/tutorials/tutorials.html
- 地點
- Office are 601 of MIRC bld.
- 時間
- Mo-Tu:13.30-16.00
- 聯絡方式
- email: artu@nctu.edu.tw