矽奈米元件及物理

Introduce students to the silicon-based nano devices of today and tomorrow.

半導體元件物理 (Undergraduate Level)

無備註

助教聯絡方式: ED308 (ext. 54216)

Midterm, Final, Class Participation

• Introduction

  ITRS and technology scaling, review of MOS capacitor, etc.

• Quantitative Analysis for MOS Capacitor

  Surface potential based model, quantum-mechanical effect, impact of interface traps, random telegraph noise, etc.

• Basic/Important Concepts for MOSFETs

  Concept of front-gate and back-gate, mechanism of current saturation, channel mobility, etc.

• Short-Channel & Nanoscale MOSFETs

  Carrier velocity saturation, strained-Si, ballistic transport, subthreshold leakage and DIBL, etc.

• MOSFET Scaling & Design

  Quasi-2D analysis, vertical scaling, channel non-uniform doping profiles, etc.

• SOI and FinFET

  Partially-depleted SOI, fully-depleted SOI, ultra-thin-body SOI, multi-gate devices, FinFET, etc.

• Other Topics

  Output conductance, random variations, etc.

1. Handouts & Class Notes. 2. Fundamentals of Modern VLSI Devices, Taur and Ning, Cambridge University Press, 2nd Edition, 2009. 3. Modern semiconductor devices for integrated circuits, Chenming Calvin Hu, Pearson, 2010.

地點

工程四館531室

時間

By appointment.

聯絡方式

分機54142 E-mail: pinsu@faculty.nctu.edu.tw