半導體記憶體
Semiconductor Memory
| 節 | 週二 |
|---|---|
7 15:30–16:20 | 半導體記憶體 EE207（光復） 3 節連堂 |
8 16:30–17:20 | |
9 17:30–18:20 |
* 根據陽明交大上課時間表所列
Basic of the semiconductor memory technology will be lectured. At this semester, device and process integration technology are mainly studied. After receive the course, you will get the basic understanding of memory operation mechanism, each devices performances, issues of reliabilities, road map, et al.
Fundamentals of semiconductor, Operation of the MOS Transistor
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1.Homework and Assignments: few (1 or 2 times) 2.Exams and Quizzes: middle & final test 3.Evaluation and Grading Policy: mainly by the result of test score
Semiconductor memory outline and recent trend
RAM (DRAM, SRAM)
Semiconductor memory outline and recent trend
EPROM, EEPROM
Semiconductor memory outline and recent trend
Flash memory basic
Semiconductor memory outline and recent trend
NAND operation
| 週次 | 主題 |
|---|---|
| 第 1 週 | Review of background (Si energy band diagram, Tunneling, et al) |
| 第 2 週 | Introduction & review of background (MOS transistor) |
| 第 3 週 | RAM operation (DRAM, SRAM) |
| 第 4 週 | Non-volatile memory overview |
| 第 5 週 | EPROM, NOR Flash memory basic |
| 第 6 週 | NAND Flash operation I(structure, basic operation) |
| 第 7 週 | NAND Flash operation II(Programming scheme) |
| 第 8 週 | Nonvolatile memory process integration |
| 第 9 週 | NAND Flash operation III (Multi-level operation) |
| 第 10 週 | Middle test |
| 第 11 週 | Nonvolatile memory reliability I(Instability of operation) |
| 第 12 週 | Nonvolatile memory reliability II(Hot electron damage) |
| 第 13 週 | Nonvolatile memory reliability III (data retention et al) |
| 第 14 週 | MONOS Flash memory I |
| 第 15 週 | MONOS Flash memory II |
| 第 16 週 | 3D Flash memories |
| 第 17 週 | Flash memory scaling trend |
| 第 18 週 | Final test |
Title: NAND Flash Memory; Author: Tzeng De-Jang; Year of publication: 2009/09/01; I S B N:986817838X
- 地點
- MISRC 813R
- 時間
- Monday afternoon from 13:30
- 聯絡方式
- rshirota@faculty.nctu.edu.tw