半導體物理及元件(二)

元件物理,元件結構與可靠性,元件內載子傳輸性質,使學生具備閱讀國際期刊論文及從事學術研究和工業應用之基本能力

半導體物理及元件(一)

無備註

使用上課講義

期中考與期末考計90% 課堂表現10%

• MOS Structure and Charge Control

  MOS band-diagram threshold voltage -body effect -short channel effect -reverse short channel effects MOS C-V

• MOSFET OFF-State I-V

  subthreshold leakage current -subthreshold swing ( bulk MOSFET, SOI, negative capacitance FET) -drain induced barrier lowering (DIBL) gate induced drain leakage (GIDL) gate oxide tunneling leakage -quantum interference

• MOSFET ON-State I-V

  linear region saturation region channel length modulation effect pinch-off voltage and trans-conductance substrate current

• Hot Carrier Effects and Drain Engineering

  impact ionization and substrate current lucky electron model interface trap and oxide charge creation hot carrier induced device degradation charge pumping measurement drain engineering and high voltage MOSFET (LDMOS)

• Gate Oxide and Tunnel Oxide Reliability

  Trap-assisted tunneling and stress induced leakage current (SILC) oxide breakdown models ( 1/E model, E model, QBD, Qp) ultra-thin oxide soft breakdown

• Bias Temperature Instability (BTI)

  BTI induced Vt degradation model -ΔVt proportional to t^n, n=1/4 or 1/6 BTI recovery characteristics and modeling single trapped charge induced ΔVt distribution

• Random Telegraph Noise (RTN)

  origin of RTN 1/f versus Lorentzian noise distribution extraction of RTN trap position RTN amplitude distribution

• Advanced CMOS Devices

  strained CMOS SOI, FinFET and GAA FET Quantum-well channel FET

• Non-volatile Memory

  floating gate flash memory charge trap flash memory (SONOS) resistance memory (RRAM)

• Advanced Carrier Transport Theory in CMOS

  Boltzmann transport equation electron scattering mechanisms -phonon scattering -ionized impurity scattering

(1) "Physics of Semiconductor Devices," S. Sze (2) "Solid-state Electronic Devices," Ben G. Streetman, 6th edition (3) "Fundamentals of Modern VLSI devices," Yuan Taur (4) "Advanced Theory of Semiconductor Devices," Karl Hess (5) IEEE Journal (EDL, TED) and Conference Papers

地點

教師辦公室

時間

星期五EF

聯絡方式

email: twang@cc.nctu.edu.tw