半導體物理及元件
Semiconductor Physics and Devices
| 節 | 週六 |
|---|---|
2 09:00–09:50 | 半導體物理及元件 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
This course is aimed to provide the physics of semiconductor, metal-semiconductor junction, and p-n junction to understand the operation principles of semiconductor devices as well as the relation between the device geometry and material parameters. We start from basic reviews of fundamental physics. Then the physics of semiconductor materials and different junctions are introduced. Finally, we study the operations of semiconductor devices such as Bipolar Junction transistor, MOS capacitor and MOSFET.
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We will have 2-hour lecture and 1-hour practice with TAs each week. Midterm exams will be written exams. Final exams can be either written or oral exams. * Grading Policy: - Assignments and Attendance: 20% - Midterm Exams: 30% - Final Exams: 50%
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| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction 2023-09-16(六) |
| 第 2 週 | Review of Modern Physics 2023-09-23(六) |
| 第 3 週 | Review of Modern Physics 2023-09-30(六) |
| 第 4 週 | Semiconductor Fundamentals (I) 2023-10-07(六) |
| 第 5 週 | Semiconductor Fundamentals (II) 2023-10-14(六) |
| 第 6 週 | Semiconductor Fundamentals (III) 2023-10-21(六) |
| 第 7 週 | p-n junctions (I) 2023-10-28(六) |
| 第 8 週 | p-n junctions (II) 2023-11-04(六) |
| 第 9 週 | Metal-Semiconductor Junctions 2023-11-11(六) |
| 第 10 週 | Midterm Exam 2023-11-18(六) |
| 第 11 週 | Bipolar Junction Transistors (I): the transistor action, static characteristic of Bipolar transistor 2023-11-25(六) |
| 第 12 週 | Bipolar Junction Transistors (iI): the transistor action, static characteristic of Bipolar transistor 2023-12-02(六) |
| 第 13 週 | Bipolar Junction Transistors (III)/MOS capacitor (I): The thyristor and power devices/ the ideal MOS diode 2023-12-09(六) |
| 第 14 週 | MOS Capacitors : The surface depletion region, Ideal MOS curves, the SiO2-Si MOS diode 2023-12-16(六) |
| 第 15 週 | MOSFET(I): MOSFET fundamentals, basic device characteristics 2023-12-23(六) |
| 第 16 週 | MOSFET (II): Device scaling and short-channel effects, CMOS and BiCMOS 2023-12-30(六) |
| 第 17 週 | MOSFET (III): MOS Memory structures, the power MOSFET 2024-01-06(六) |
| 第 18 週 | Final Exam 2024-01-13(六) |
1. Physics of Semiconductor Devices (3rd Edition) by S.M.Sze and Kwok K. Ng. John Wiley & Sons 2007 2. Semiconductor Devices: Physics and Technology (2nd Edition) by S.M.Sze, John Wiley & Sons 2001 3. Physics of Semiconductor Devices, by Jean-Pierre Colinge, Kluwer Academic Publishers 2005
- 地點
- R107T1
- 時間
- 8-9h Tuesday
- 聯絡方式
- nguyenviettuyen@hus.edu.vn