半導體元件物理
Semiconductor Device Physics
| 節 | 週五 |
|---|---|
2 09:00–09:50 | 半導體元件物理 ED201（光復） 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
To learn the physics of electronic devices
First year physics
無備註
lectures
midterm exam 50% final exam 50%
教師未提供此項資料
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction |
| 第 2 週 | Basic Concepts |
| 第 3 週 | Carrier Treansport |
| 第 4 週 | p-n Junctions (A simple method is used instead of complicated eqns in textbook) |
| 第 5 週 | MOS Capacitors |
| 第 6 週 | Metal-Silicon Contacts |
| 第 7 週 | High-Field Effects |
| 第 8 週 | Midterm Exam |
| 第 9 週 | Drain-Current Model & I-V Characteristics (Simple model is used instead of complicated eqns in textbook) |
| 第 10 週 | Subthreshold, Mobility & Other Device Characteristics |
| 第 11 週 | Subthreshold, Mobility & Other Device Characteristics |
| 第 12 週 | Short-Channel MOSFETs |
| 第 13 週 | High-Field Transport |
| 第 14 週 | Device Solution to Short Channel Effect |
| 第 15 週 | Equivalent Circuit Model & High Frequency Response |
| 第 16 週 | Final Exam |
Fundamental of Modern VLSI Devices, Yuan Taur and Tak H. Ning
- 地點
- ED645
- 時間
- 1 hour before class
- 聯絡方式
- achin@nycu.edu.tw