半導體元件物理(一)

課程概述:本課程旨在講授半導體元件基本原理,學習半導體元件工作原理與特性。課程並簡介這些元件之技術與應用。此為電機資訊學院跨領域研究之基礎。 課程目標: 一、了解半導體元件之物理與基本觀念。二、學習二極體、金屬半導體接面、金屬絕緣體半導體電容、雙極性接面電晶體、金屬氧化物半導體場效應電晶體之基本原理與特性。三、了解積體電路元件相關應用。 Course Overview: This course introduces the fundamental principles of semiconductor devices. Students will learn the operating mechanisms and characteristics of semiconductor devices. The course also provides an introduction to the technologies and applications of these devices. It serves as a foundational course for interdisciplinary research in the College of Electrical Engineering and Computer Science. Course Objectives: 1. To understand the physics and basic concepts of semiconductor devices. 2. To study the fundamental principles and characteristics of diodes, metal–semiconductor junctions, metal–insulator–semiconductor capacitors, bipolar junction transistors, and metal–oxide–semiconductor field-effect transistors (MOSFETs). 3. To gain an understanding of the applications related to integrated circuit (IC) devices.

電子學、微積分、普通物理 Electronics, Calculus, Physics

無備註

資訊以課程line group, email, 或學校new e3平台通知。 搭配電腦模擬與視覺,老師以投影片或黑板講授課程內容 。 助教解說課程補充資料。 Course information will be communicated via the course Line group, email, or the university's New E3 platform. The instructor will use computer simulations and visual aids, delivering course content through slides or the blackboard. Teaching assistants will provide explanations of supplementary course materials.

平時表現:30% Class Performance / Participation: 30% 期中考:35% Midterm Exam: 35% 期末考:35% Final Exam: 35%

• 簡介 Introduction

  簡介元件發展與背景、半導體觀念以及光電特性。 Introduction to device development and background, and concepts of devices including their optoelectronic properties.

  講授：

  6

• 二極體 p-n junction

  解說pn接面的工作原理、交直流特性分析。 Explanation of the operating principles of the p–n junction and analysis of its AC and DC characteristics.

  講授：

  9

• 金屬半導體接面、金屬絕緣體半導體電容 Metal–semiconductor junction, metal–insulator–semiconductor capacitor.

  簡介MS接面位障、載子傳輸原理、歐姆接觸、MIS電容特性、矽MOS電容、量子侷限效應。 1. MS Interface States (Metal–Semiconductor Interface States) 2. Carrier Transport Mechanisms: Drift / Diffusion / Thermionic Emission / Tunneling 3. Ohmic Contact 4. MIS Capacitor Characteristics (Metal–Insulator–Semiconductor): Accumulation / Depletion / Inversion / Capacitance–Voltage (C–V) Behavior 5. Silicon MOS Capacitor 6. Quantum Confinement Effect

  講授：

  9

• 雙極性接面電晶體 Bipolar Junction Transistors

  簡介BJT工作原理、等校電路模型、高頻特性、異質接面BJT、自熱效應。 • BJT Operation (Bipolar Junction Transistor): • Small-Signal Equivalent Circuit: • High-Frequency Characteristics: fT / Miller effect / Gain • Heterojunction BJT (HBT): • Self-Heating Effect:

  講授：

  9

• 金屬氧化物半導體場效應電晶體 Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)

  講授MOSFET特性、通道摻雜、短通道效應、元件微縮原理、元件結構、等校電路模型與電路應用、負電容場效應電晶體、穿隧場效應電晶體、單電子場效應電晶體。 MOSFET characteristics Channel doping Short-channel effects Device scaling principles Device structure Small-signal equivalent circuit model and circuit applications Negative-capacitance field-effect transistor (NCFET) Tunnel field-effect transistor (TFET) Single-electron transistor (SET)

  講授：

  15

(1) Simon M. Sze, Yiming Li, and Kwok K. Ng, “Physics of Semiconductor Devices, 4th Edition,” Wiley, 2021. (2) Simon M Sze and Ming-Kwei Lee, Semiconductor Devices Physics: and Technology, Third Edition, Wiley, 2013.

地點

老師辦公室:電資812 Professor Li's Office locates at MISRC, ES 812R

時間

每週三下午或以email另約時間討論 Discussion Time: Every Wednesday afternoon, or by appointment via email.

聯絡方式

老師電子郵件信箱 Professor Li's email: ymli @ mail . ymlab . org