矽奈米元件及物理
Silicon Nanometer Devices and Physics
| 節 | 週四 |
|---|---|
2 09:00–09:50 | 矽奈米元件及物理 EE106（光復） 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
Introduce students to the silicon-based nano devices of today and tomorrow.
半導體元件物理 (Undergraduate Level)
無備註
助教聯絡方式: ED308 (ext. 54216)
Midterm, Final, Class Participation
Introduction
ITRS and technology scaling, review of MOS capacitor, etc.
Quantitative Analysis for MOS Capacitor
Surface potential based model, quantum-mechanical effect, impact of interface traps, random telegraph noise, etc.
Basic/Important Concepts for MOSFETs
Concept of front-gate and back-gate, mechanism of current saturation, channel mobility, etc.
Short-Channel & Nanoscale MOSFETs
Carrier velocity saturation, strained-Si, ballistic transport, subthreshold leakage and DIBL, etc.
MOSFET Scaling & Design
Quasi-2D analysis, vertical scaling, channel non-uniform doping profiles, etc.
SOI and FinFET
Partially-depleted SOI, fully-depleted SOI, ultra-thin-body SOI, multi-gate devices, FinFET, etc.
Other Topics
Output conductance, random variations, etc.
| 週次 | 主題 |
|---|---|
| 第 1 週 | 2026-02-26(四) |
| 第 2 週 | 2026-03-05(四) |
| 第 3 週 | 2026-03-12(四) |
| 第 4 週 | 2026-03-19(四) |
| 第 5 週 | 2026-03-26(四) |
| 第 6 週 | 2026-04-02(四) |
| 第 7 週 | 2026-04-09(四) |
| 第 8 週 | 2026-04-16(四) |
| 第 9 週 | 2026-04-23(四) |
| 第 10 週 | 2026-04-30(四) |
| 第 11 週 | 2026-05-07(四) |
| 第 12 週 | 2026-05-14(四) |
| 第 13 週 | 2026-05-21(四) |
| 第 14 週 | 2026-05-28(四) |
| 第 15 週 | 2026-06-04(四) |
| 第 16 週 | 2026-06-11(四) |
1. Handouts & Class Notes. 2. Fundamentals of Modern VLSI Devices, Taur and Ning, Cambridge University Press, 2nd Edition, 2009. 3. Modern semiconductor devices for integrated circuits, Chenming Calvin Hu, Pearson, 2010.
- 地點
- 工程四館531室
- 時間
- By appointment.
- 聯絡方式
- 分機54142 E-mail: pinsu@nycu.edu.tw