半導體物理及元件(一)
Semiconductor Physics and Devices (I)
| 節 | 週一 |
|---|---|
2 09:00–09:50 | 半導體物理及元件(一) A306（光復） 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
Semiconductor devices are the building blocks of modern electronics, enabling technologies from simple rectifiers to complex integrated circuits. These devices, such as diodes, transistors, and optoelectronic components, exploit the unique properties of semiconductor materials to control electrical signals and energy. The core knowledge of the semiconductor physics and devices, therefore has become essential for researchers and engineers. In this class, the properties for the semiconductor materials, the physics of energy band formation, carrier statistics and transport, and the operation principals for the most important devices architectures such as diode, BJTs, and MOSFETs will be introduced and discussed in details. Furthermore, the recent progress and challenges in developing beyond Moore's law technologies will be reviewed. Objectives: 1. Understand fundamental concepts of electric circuits and semiconductor devices 2. Analyze the operation and characteristics of key semiconductor devices such as p-n junctions, MOSFETs, BJTs, and LEDs. 3. Relate theoretical knowledge to the design and optimization of semiconductor devices for specific applications in electronics and photonics. 4. Investigate the role of semiconductors in cutting-edge technologies, including FinFET, GAA, silicon photonics, and advanced fabrication techniques.
Fundamentals of Physics
無備註
TA: TBD
Midterm exam: 30% Final exam: 30% Homework 40% Class participation: Bonus
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| 週次 | 主題 |
|---|---|
| 第 1 週 | Course introduction Fundamentals of electronics – circuits and devices 2026-02-23(一) 時數：[2026-02-23]王培勳(3.00) |
| 第 2 週 | Overview of semiconductors in modern technology 2026-03-02(一) 時數：[2026-03-02]王培勳(3.00) |
| 第 3 週 | Crystal structure and band theory of solids 2026-03-09(一) 時數：[2026-03-09]王培勳(3.00) |
| 第 4 週 | Energy band theory and carrier statistics 2026-03-16(一) 時數：[2026-03-16]王培勳(3.00) |
| 第 5 週 | Carrier transport mechanisms 2026-03-23(一) 時數：[2026-03-23]王培勳(3.00) |
| 第 6 週 | Mechanisms of generation and recombination 2026-03-30(一) 時數：[2026-03-30]王培勳(3.00) |
| 第 7 週 | P-N junction diode Spring break (no class) 2026-04-06(一) 時數：[2026-04-06]王培勳(3.00) |
| 第 8 週 | Midterm 2026-04-13(一) 時數：[2026-04-13]王培勳(3.00) |
| 第 9 週 | Diode characteristics and applications 2026-04-20(一) 時數：[2026-04-20]王培勳(3.00) |
| 第 10 週 | Metal-semiconductor contacts 2026-04-27(一) 時數：[2026-04-27]王培勳(3.00) |
| 第 11 週 | Bipolar junction transistors (BJTs) 2026-05-04(一) 時數：[2026-05-04]王培勳(3.00) |
| 第 12 週 | BJT characteristics and applications 2026-05-11(一) 時數：[2026-05-11]王培勳(3.00) |
| 第 13 週 | Metal-oxide-semiconductor field-effect transistors (MOSFETs) 2026-05-18(一) 時數：[2026-05-18]王培勳(3.00) |
| 第 14 週 | MOS characteristics and applications 2026-05-25(一) 時數：[2026-05-25]王培勳(3.00) |
| 第 15 週 | Advanced semiconductor devices (FinFET, GAA) 2026-06-01(一) 時數：[2026-06-01]王培勳(3.00) |
| 第 16 週 | Final exam 2026-06-08(一) 時數：[2026-06-08]王培勳(3.00) |
1. S.M.Sze, Physics of Semiconductor Devices, 4th Edition, 2021. 2. Evstigneev, Mykhaylo. Introduction to semiconductor physics and devices. Springer, 2022. 3. D. Neamen, Semiconductor Physics and Devices, 4th edition (2012).
- 地點
- MIRC R601
- 時間
- M 2-3 pm
- 聯絡方式
- Email: phwang@nycu.edu.tw