元件精簡模型
Compact Modeling
| 節 | 週五 |
|---|---|
5 13:20–14:10 | 元件精簡模型 A306（光復） 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
Compact models serve as a bridge or a translator between the physics-based half of the semiconductor industry (devices and foundries) and its computer-based half (EDA tools and IC design). This course will comprehensively cover the physics and modeling aspects of MOS capacitors and MOSFETs and also introduce advanced FETs such as FinFETs and Nanosheet/Gate-all-around FETs, along with their non-ideal effects. The course aims to delve into the strategies for developing models that meet the industry's requirements for accuracy, computational speed, and robustness. Students will be introduced to industry-standard models such as BSIM-BULK and BSIM-CMG and will also learn benchmarking tests for compact models. Additionally, the course will familiarize students with EDA tools, including TCAD, SPICE simulators, and the Verilog-A hardware description language, preparing them for real-world applications.
Semiconductor physics fundamentals
無備註
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Midterm exam: 20% Final exam: 30% Homework + Project: 40% Class participation: 10%
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| 週次 | 主題 |
|---|---|
| 第 1 週 | Holiday 2026-02-27(五) |
| 第 2 週 | Device Modeling Introduction, Need for Compact models for IC design, Compact modeling requirements, Simulation introduction (atomistic, TCAD, SPICE) 2026-03-06(五) |
| 第 3 週 | Introduction to SPICE: SPICE syntax and netlist, DC, AC, and transient analysis Verilog-A language introduction, compact modeling simplifications 2026-03-13(五) |
| 第 4 週 | Recap of Semiconductor Physics Fundamentals 2026-03-20(五) |
| 第 5 週 | Modeling of Metal Oxide Semiconductor (MOS) Capacitor: Types of oxide charges, Flat band voltage, Impact of gate biasing conditions and Band diagrams: physics of accumulation, depletion, and inversion 2026-03-27(五) |
| 第 6 週 | Holiday 2026-04-03(五) |
| 第 7 週 | Modeling of Metal Oxide Semiconductor (MOS) Capacitor: charge/surface potential approximations in different MOS operating regions, Numerical solution of surface potential for Three-terminal MOS structure 2026-04-10(五) |
| 第 8 週 | Mid-term exam 2026-04-17(五) |
| 第 9 週 | MOSFET Modeling: Operating principle, Charge-surface potential relation, Accumulation, depletion, and inversion characteristics. 2026-04-24(五) |
| 第 10 週 | Holiday 2026-05-01(五) |
| 第 11 週 | MOSFET Modeling: Pinch-off voltage, Current models, Subthreshold swing and Boltzmann limit, Threshold voltage, and Case studies of industry-standard BSIM4 and BSIM-BULK models. 2026-05-08(五) |
| 第 12 週 | Modeling of Real Device Effects: Mobility degradation and scattering mechanisms, Parasitic series resistances, Temperature effects, Self-heating, Short channel effects, Velocity saturation, Channel length modulation, Ballistic operation, Hot Carriers and impact Ionization, Quantum mechanical effects, Leakage currents. 2026-05-15(五) |
| 第 13 週 | Advanced MOSFET Models: Moore's Law and Dennard's Scaling, Introduction to FinFET, FDSOI, and GAAFET Technologies Introduction to industry-standard BSIM-CMG model 2026-05-22(五) |
| 第 14 週 | Transient Modeling: Quasi-static approximation, Modeling of terminal charges and capacitances, Transit time, Limitations of quasi-static approach, Introduction non-quasi-static models. 2026-05-29(五) |
| 第 15 週 | Industry-standard compact model features and tests: Parameter binning, Instance parameters vs model parameters, Local parameter fitting vs global parameter fitting, Benchmarking tests. 2026-06-05(五) |
| 第 16 週 | Final exam. 2026-06-12(五) |
1. Y. Tsividis and C. McAndrew, "Operation and Modeling of the MOS Transistor", Oxford Univ. Press, 2010 2. G. Gildenblat, "Compact Modeling: Principles, Techniques and Applications", Springer, 2010 3. W. Liu and C. Hu, "Bsim4 and MOSFET Modeling For IC Simulation", World Scientific Publishing Co., 2011 4. CC Enz, “Charge-based MOS transistor modeling: the EKV model for low-power and RF IC design”. John Wiley & Sons; 2006. 5. C. Hu, "Modern Semiconductor Devices for Integrated Circuits", Pearson, 2009
- 地點
- EF471
- 時間
- Monday 3-4 pm or by appointment
- 聯絡方式
- girish@nycu.edu.tw