半導體製程技術
Semiconductor Processing Technology
| 節 | 週四 | 週五 |
|---|---|---|
5 13:20–14:10 | 半導體製程技術 EE548(光復) 3 節連堂 | 半導體製程技術 EE548(光復) 3 節連堂 |
6 14:20–15:10 | ||
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
This course provides an overview of modern semiconductor device fabrication processes, emphasizing the underlying principles of each major process step. The course also includes discussions of device integration through case studies of accelerometers and gate-all-around (GAA) silicon nanodevices.
College Calculus, Physics and Chemistry
無備註
Book and scientific articles Handouts will be provided each week
Homwork: 25% Exam #1: 25% Exam #2: 25% Final Exam: 25%
教師未提供此項資料
| 週次 | 主題 |
|---|---|
| 第 1 週 | 1. Introduction: - IC Fabrication Process Overview - How the fabrication processes affects the properties of semiconductor devices 2. Photolithography (I) |
| 第 2 週 | 1. Photolithography (II) 2. Advanced nanolithography: research and Mass production |
| 第 3 週 | 1. Thermal process, Oxidation, and Difussion 2. Exam #1 |
| 第 4 週 | 1. Phycical and chemical vapor deposition: - basics on Plasma - Thermal vs. plasma-enhanced deposition 2. Thermal and plasma-enhanced Atomic layer deposition |
| 第 5 週 | 1. Physical ablation 2. Wet etching |
| 第 6 週 | 1. Dry Etching (I) - RIE - High density plasma etching - Atomic layer etching 2. Exam#2 |
| 第 7 週 | 1 . Ion Implantation, Metalization and Fabrication Process vs. device scaling 2. Device Process Integration Case 1: ADXL accelerometer |
| 第 8 週 | 1. Device process Integration Case 2: SiNW, Si nanopbelt with Gate-all-around 2. Final exam |
1. Introduction to Semiconductor Manufacturing Technology, Hong Xiao, 2012. 2. Handbook of Semiconductor Manufacturing Technology, Yoshio Nishi, Robert Doering, 2017 3. Semiconductor Microchips and Fabrication: A Practical Guide to Theory and Manufacturing, Yaguang Lian, 2022 3. Journal articles
- 地點
- 田家炳 616A
- 時間
- Monday 13:20 ~14:20
- 聯絡方式
- sheujt@nycu.edu.tw
