電子學(一)
Electronics (I)
| 節 | 週一 | 週四 |
|---|---|---|
3 10:10–11:00 | 電子學(一) EE208（光復） 2 節連堂 | |
4 11:10–12:00 | ||
7 15:30–16:20 | 電子學(一) EE208（光復） 2 節連堂 | |
8 16:30–17:20 |
* 根據陽明交大上課時間表所列
After taking this course, students will understand the important characteristics of microelectronic devices and some of their basic applications, and be able to analyze basic microelectronic circuits.
General physics
無備註
Related information will be announced on E3. T.A. at 807, Engineering building V, Ext. 54397
1. One mid-term and one final examinations (會考). 2. Several in-class examinations. 3. Grading policy: 34% for each mid-term examination and 34% for the final examination, 32% for in-class exam and performance.
Chapter 1. Introduction
Introduction to Microelectronic circuits and basic semiconductor physics.
- 講授：
- 9
Chapter 2. Operational Amplifiers
Properties of Operational Amplifiers, inverting/non-inverting configurations, adder/multiplier
- 講授：
- 4
Chapter 3. PN Junctions
Physical structure I-V characteristics Application circuits
- 講授：
- 10
Chapter 4. Bipolar junction transistors
Physical structure Operation modes
- 講授：
- 6
Chapter 5. MOSFET
Physical structure Operation modes
- 講授：
- 6
Chapter 6. Transistor amplifiers
Single-stage amplifiers
- 講授：
- 9
| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction to Microelectronic, Signals, four types of basic amplifiers 2026-09-07(一),2026-09-10(四) |
| 第 2 週 | Operational Amplifiers: The ideal OP amp, The Inverting Configuration 2026-09-14(一),2026-09-17(四) |
| 第 3 週 | The Noninverting Configuration, Difference Amplifier Basic Semiconductor, PN Junctions 2026-09-21(一),2026-09-24(四) |
| 第 4 週 | Terminal characteristics and Models of junction diodes, Zener diodes and diode application circuits 2026-09-28(一),2026-10-01(四) |
| 第 5 週 | Zener diodes and diode application circuits 2026-10-05(一),2026-10-08(四) |
| 第 6 週 | BJT device structure and operation 2026-10-12(一),2026-10-15(四) |
| 第 7 週 | BJT I-V characteristics and device mode 2026-10-19(一),2026-10-22(四) |
| 第 8 週 | Biasing circuit of BJT amplifiers 2026-10-26(一),2026-10-29(四) |
| 第 9 週 | BJT as a switch and BJT basic amplifiers (I) 2026-11-02(一),2026-11-05(四) |
| 第 10 週 | BJT basic amplifiers (II) 2026-11-09(一),2026-11-12(四) |
| 第 11 週 | MOSFET device structure and operation 2026-11-16(一),2026-11-19(四) |
| 第 12 週 | MOSFET I-V characteristics and device model 2026-11-23(一),2026-11-26(四) |
| 第 13 週 | MOSFET Circuits at DC and Biasing Circuits 2026-11-30(一),2026-12-03(四) |
| 第 14 週 | MOSFET as a switch and MOSFET basic amplifiers (I) 2026-12-07(一),2026-12-10(四) |
| 第 15 週 | MOSFET as a switch and MOSFET basic amplifiers (II) 2026-12-14(一),2026-12-17(四) |
| 第 16 週 | MOSFET as a switch and MOSFET basic amplifiers (III) Final examination 2026-12-21(一),2026-12-24(四) |
Microelectronic Circuits 8/e (Bilingual Version) 作者：Sedra 年份：2026 年8 版 ISBN：9786269316670 書號：EE0540PCT 出版商：Oxford
- 地點
- EE807/EE705, Engineering building V
- 時間
- 14:30~15:20 p.m., Every Monday
- 聯絡方式
- Ext. 54397/54375