半導體元件物理
Semiconductor Device Physics
| 節 | 週二 |
|---|---|
2 09:00–09:50 | 半導體元件物理 EE208（光復） 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
This course provides a foundation for understanding the underlying physics and operation principles of several key solid-state electronic devices. (實體課中文為主，會另外錄製全英文的線上影片)
1. 普通物理 (大一) 2. 近代物理 (大二)
無備註
助教聯絡方式: 蘇子筌 tcsu.ii15@nycu.edu.tw
Assignment: 6 reports, 20% Written examination: 2 examinations, 70% Class participation: 10%
1.1 Quantum Theory of Solids
Energy Bands, Electrical Conduction, k-space diagrams, Density of States, Fermi-Dirac probability Function
1.2 Equilibrium Distribution of Electrons and Holes
Intrinsic Semiconductors, Extrinsic Semiconductors, Charge Neutrality, Position of Fermi Energy Level
1.3 Carrier Transport Phenomena
Thermal Motion, Drift, Thermal-Dependent Scattering, Diffusion
1.4 Non-Equilibrium Excess Carriers
Generation and Recombination, Characteristics of Excess Carriers, Quasi-Fermi Energy Levels
2.1 PN Junction and M-S Contact
PN Junction Theory, Depletion Approximation, PN Junction under Reverse Bias, PN Junction under Forward Bias, Concept of Charge Storage, Metal-Semiconductor Junction
2.2 MOS Capacitor
Flat-Band Condition, Accumulation, Depletion, Threshold Condition and Threshold Voltage, Strong Inversion, MOS C-V Characteristics, etc.
2.3 MOSFET
Introduction to CMOS, Inversion Charges in MOSFET, Basic MOSFET I-V Model, Mechanism of Current Saturation, Subthreshold Characteristics, etc.
| 週次 | 主題 |
|---|---|
| 第 1 週 | Course introduction 2026-09-08(二) |
| 第 2 週 | Introduction, Quantum theory of solids (1) 2026-09-15(二) |
| 第 3 週 | Quantum theory of solids (2) 2026-09-22(二) |
| 第 4 週 | Equilibrium distribution of Electrons and Holes (1) 2026-09-29(二) |
| 第 5 週 | Equilibrium distribution of Electrons and Holes (2) 2026-10-06(二) |
| 第 6 週 | Carrier Transport Phenomena 2026-10-13(二) |
| 第 7 週 | Non-Equilibrium Excess Carriers 2026-10-20(二) |
| 第 8 週 | Midterm exam 2026-10-27(二) |
| 第 9 週 | PN Junction and M-S Contact (1) 2026-11-03(二) |
| 第 10 週 | PN Junction and M-S Contact (2) 2026-11-10(二) |
| 第 11 週 | PN Junction and M-S Contact (3) 2026-11-17(二) |
| 第 12 週 | MOS Capacitor (1) 2026-11-24(二) |
| 第 13 週 | MOS Capacitor (2) 2026-12-01(二) |
| 第 14 週 | MOSFET (1) 2026-12-08(二) |
| 第 15 週 | MOSFET (2) 2026-12-15(二) |
| 第 16 週 | Final exam 2026-12-22(二) |
Donald A. Neamen, "Semiconductor Physics & Devices: Basic Principles", 4th Edition. Chenming Hu, “Modern Semiconductor Devices for Integrated Circuits”
- 地點
- 教師未提供此項資料
- 時間
- After class or by appointment
- 聯絡方式
- telee@nycu.edu.tw 實驗室介紹: https://sites.google.com/view/nycu-ecdl