半導體物理及元件(一)
Semiconductor Physics and Devices (I)
| 節 | 週四 |
|---|---|
5 13:20–14:10 | 半導體物理及元件(一) A212（光復） 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
Upon completion of this course, students will be able to: 1. Understand the fundamental physical principles governing semiconductor materials, energy bands, carrier statistics, and carrier transport. 2. Analyze the electrostatics and carrier transport mechanisms in semiconductor devices using appropriate physical models and mathematical formulations. 3. Explain the operating principles and electrical characteristics of major semiconductor devices, including p–n junctions, BJTs, MOS capacitors, MOSFETs, SBDs, HEMTs, photodetectors, LEDs, lasers, and solar cells. 4. Apply semiconductor physics to predict device performance, including current flow, capacitance, switching behavior, breakdown, and high-frequency operation. 5. Analyze contemporary semiconductor device technologies by connecting classical device physics with current research and industrial developments.
No prerequisite
無備註
Lecture
Miterm Exam 35% Final Exam 40% Homework 25%
教師未提供此項資料
| 週次 | 主題 |
|---|---|
| 第 1 週 | Semiconductor materials, crystal structures, covalent bonding, introduction to wide bandgap semiconductors 時數：[2026-09-10]杜長慶(3.00) |
| 第 2 週 | Energy bands, density of states, intrinsic carrier concentration, Fermi level, bandgap comparison and impact on breakdown field, intrinsic carrier concentration, high-temperature operation 時數：[2026-09-17]杜長慶(3.00) |
| 第 3 週 | Carrier drift, mobility, conductivity, diffusion, recombination, continuity equation, high-field transport 時數：[2026-09-24]杜長慶(3.00) |
| 第 4 週 | PN junction equilibrium, depletion approximation 時數：[2026-10-01]杜長慶(3.00) |
| 第 5 週 | PN junction current, capacitance, switching, breakdown 時數：[2026-10-08]杜長慶(3.00) |
| 第 6 週 | Bipolar junction transistor (BJT) 時數：[2026-10-15]杜長慶(3.00) |
| 第 7 週 | HBT, thyristor, IGBT 時數：[2026-10-22]杜長慶(3.00) |
| 第 8 週 | Midterm Exam 時數：[2026-10-29]杜長慶(3.00) |
| 第 9 週 | MOS capacitor, C-V characteristics, interface states 時數：[2026-11-05]杜長慶(3.00) |
| 第 10 週 | MOSFET fundamentals 時數：[2026-11-12]杜長慶(3.00) |
| 第 11 週 | Advanced MOSFETs, CMOS, SOI, power MOSFET, VDMOS, Superjunction 時數：[2026-11-19]杜長慶(3.00) |
| 第 12 週 | Metal-semiconductor contacts, Schottky barriers, MESFET 時數：[2026-11-26]杜長慶(3.00) |
| 第 13 週 | HEMT 時數：[2026-12-03]杜長慶(3.00) |
| 第 14 週 | Microwave devices and quantum devices 時數：[2026-12-10]杜長慶(3.00) |
| 第 15 週 | LEDs, laser diodes, photodetectors and solar cells 時數：[2026-12-17]杜長慶(3.00) |
| 第 16 週 | Final Exam 時數：[2026-12-24]杜長慶(3.00) |
Semiconductor Devices: Physics and Technology 3/e Simon M. Sze, Ming-Kwei Lee Wiley ISBN: 0470537949
- 地點
- MIRC Building, Suite 601
- 時間
- Office Hour: Thursday 10:00 am to 12:00 pm (please email in advance)
- 聯絡方式
- Email: changching.tu@nycu.edu.tw