低維系統中的電子傳輸及記憶概念
Electron transport in low-dimensional systems and memories concepts
| 節 | 週五 |
|---|---|
2 09:00–09:50 | 低維系統中的電子傳輸及記憶概念 EE116（光復） 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
The course covers materials science and solid-state physics for macro- to nanoscale electronic devices, with a primary focus on their resistive and conductive properties. Particular attention is devoted to the fundamental physical mechanisms underlying various memory technologies, analyzed from the perspective of barrier profiles and switching phenomena in FeRAM, ReRAM, and MRAM devices. The operating principles of spin-based magnetic electronic devices are also discussed, including magnetic domain walls in nanowires, skyrmion-related resistance effects, magnetic vortices, spin-transfer torque phenomena, and related concepts. Seminars and homework assignments include elements of device modeling and numerical simulation using high-level computational tools such as Wolfram Mathematica and MATLAB.
The course is intended for Master’s and PhD students, as well as senior undergraduate students with a basic background in solid-state physics. The course also provides an introduction to the development of custom device-simulation codes, aiming toward publication-level modeling complexity and research applications.
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1. Exams and Quizzes: 30% 2. Homework: 30%. (some simple Matlab-based codes, short presentations) 3. Participation 40%. 4. Bonus up to 25% (personal activity – solution of the advanced level problems, exelent presentations)
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| 週次 | 主題 |
|---|---|
| 第 1 週 | Basics for electronic devices: introduction into Quantum Mechanics. 2026-09-11(五) |
| 第 2 週 | Electron transport in low-dim. systems: lecture and seminar about simulation(part 1). 2026-09-18(五) |
| 第 3 週 | Tunneling phenomena. Interfaces. Lecture and seminar (part 2). Examples: Schottky barrier, magnetic tunnel junctions, domain walls, etc. 2026-09-25(五) |
| 第 4 週 | Properties of the low dimensional systems. Important length scale. Characterization of heterostructures. Different barriers and their simulation basis. 2026-10-02(五) |
| 第 5 週 | MRAM. Spintronic devices. Non-volatile memory. Electron transport in magnetic tunnel junctions (MTJ). Vortex magnetic states in MTJ. Fundamental basics for STT-MRAM, SOT-MRAM. 2026-10-09(五) |
| 第 6 週 | FeRAM and related ferroelectric devices. Basics for Ferroelectric devices. A ferroelectric (FE) semiconductor field-effect transistor, and FE tunnel juction. Screening effect. Hysteresis, etc. 2026-10-16(五) |
| 第 7 週 | FeRAM. E-field control of the resistance. AFM technique, PFM spectroscopy for FeRAM. Seminar/practice: simulation of I-V curves for devices. 2026-10-23(五) |
| 第 8 週 | ReRAM. Regime of consecutive and coherent conductivity. Seminar/practice: simulation of I-V Seminar/practice: simulation of I-V curves for devices. 2026-10-30(五) |
| 第 9 週 | Review of homework (students presentations 10-15 min). Middle term exam (quiz). 2026-11-06(五) |
| 第 10 週 | Neuromorphic computation. p-bit logic, role of magnetic domain wall and ferroelectric states in memristors. AI chips. Appendix: Deep Learning in MATLAB. 2026-11-13(五) |
| 第 11 週 | Point-like contact model and related spectroscopy. From simple simulation to the complicated one within a few steps. 2026-11-20(五) |
| 第 12 週 | Single electron devices. Quantum wells. Double barrier model for tunnel junctions. 2026-11-27(五) |
| 第 13 週 | Interface of two materials. Contact potential difference. Surface potential. Contact resistance. Fermi level behavior. 2026-12-04(五) |
| 第 14 週 | Skyrmion-based memory concept. Skyrmionics. Basic concepts and physics. Elements of Quantum computing. 2026-12-11(五) |
| 第 15 週 | DRAM cell. Review of the previous topics. Summary. Homework review. 2026-12-18(五) |
| 第 16 週 | Final review of student's homework. Final Exam. 2026-12-25(五) |
(1) E. Kasper, D.J. Paul, Silicon Quantum Integrated Circuits , Silicon–Germanium Heterostructure Devices: Basics and Realisations, Springer-Verlag Berlin Heidelberg, -2005, -362p. (2) Simon M. Sze, Yiming Li, Kwok K.HG "Physics of Semiconductor Devices" 4th Edition Willey, March (2021) (3) Victor E. Borisenko and Stefano Ossicini. What is What in the Nanoworld, A Handbook on Nanoscience and Nanotechnology (Wiley-VCH Verlag ＆amp; Co. KGaA, 2012) ePDF ISBN: 978-3-527-64839-9 Other: (*) Useinov A., Lai C.-H., et al. (2018) "Spin and Charge Tunneling Transport in Magnetic Tunnel Junctions With Embedded Nanoparticles" in E. Rentchler, N. Dormacheva et, M. Caporali "Novel Magnetic Nanostructures", Elsevier (2018) https://doi.org/10.1016/B978-0-12-813594-5.00011-4 (*) Das A., Paul A., Tewari M., et al. (2026) “Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors” ACS Applied Materials & Interfaces 18 (19): 27823–27835 {20 May} https://pubs.acs.org/doi/10.1021/acsami.6c05258
- 地點
- EE116
- 時間
- F234
- 聯絡方式
- 教師未提供此項資料