元件精簡模型
Compact Modeling
| 節 | 週五 |
|---|---|
5 13:20–14:10 | 元件精簡模型 EE116（光復） 3 節連堂 |
6 14:20–15:10 | |
7 15:30–16:20 |
* 根據陽明交大上課時間表所列
Compact models serve as a bridge or a translator between the physics-based half of the semiconductor industry (devices and foundries) and its computer-based half (EDA tools and IC design). This course will comprehensively cover the physics and modeling aspects of semiconductor devices, including MOS capacitors and MOSFETs, along with their non-ideal effects. The course aims to delve into the strategies for developing models that meet the industry's requirements for accuracy, computational speed, and robustness. Students will be introduced to industry-standard models such as BSIM-BULK and BSIM-CMG and will also learn benchmarking tests for compact models. Additionally, the course will familiarize students with EDA tools, including SPICE, Verilog-A hardware description language, and ICCAP parameter extraction software, preparing them for real-world applications.
Semiconductor physics fundamentals
無備註
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Midterm exam: 20% Final exam: 30% Homework + Project: 40% Class participation: 10%
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| 週次 | 主題 |
|---|---|
| 第 1 週 | Device Modeling Introduction, Need for Compact models for IC design, Compact modeling requirements, Simulation introduction (atomistic, TCAD, SPICE) 2026-09-11(五) |
| 第 2 週 | Introduction to SPICE: SPICE syntax and netlist, DC, AC, and transient analysis Verilog-A language introduction, compact modeling simplifications 2026-09-18(五) |
| 第 3 週 | Holiday 2026-09-25(五) |
| 第 4 週 | Recap of Semiconductor Physics Fundamentals 2026-10-02(五) |
| 第 5 週 | Holiday 2026-10-09(五) |
| 第 6 週 | Modeling of Metal Oxide Semiconductor (MOS) Capacitor: Types of oxide charges, Flat band voltage, Impact of gate biasing conditions and Band diagrams: physics of accumulation, depletion, and inversion 2026-10-16(五) |
| 第 7 週 | Modeling of Metal Oxide Semiconductor (MOS) Capacitor: charge/surface potential approximations in different MOS operating regions, Numerical solution of surface potential for Three-terminal MOS structure 2026-10-23(五) |
| 第 8 週 | Mid-term exam 2026-10-30(五) |
| 第 9 週 | MOSFET Modeling: Operating principle, charge-surface potential relation, accumulation, depletion, and inversion characteristics. 2026-11-06(五) |
| 第 10 週 | MOSFET Modeling: Approximate modeling of accumulation, depletion, and inversion characteristics. 2026-11-13(五) |
| 第 11 週 | MOSFET Modeling: Pinch-off voltage, Current models, Subthreshold swing and Boltzmann limit, Threshold voltage, and Case studies of industry-standard BSIM4 and BSIM-BULK models. 2026-11-20(五) |
| 第 12 週 | Modeling of Real Device Effects: Mobility degradation and scattering mechanisms, Parasitic series resistances, Temperature effects, Self-heating, Short channel effects, Velocity saturation, Channel length modulation, Ballistic operation, Hot Carriers and impact Ionization, Quantum mechanical effects, Leakage currents. 2026-11-27(五) |
| 第 13 週 | Advanced MOSFET Models: Moore's Law and Dennard's Scaling, Introduction to FinFET, FDSOI, and GAAFET Technologies Introduction to industry-standard BSIM-CMG model 2026-12-04(五) |
| 第 14 週 | Transient Modeling: Quasi-static approximation, Modeling of terminal charges and capacitances, Transit time, Limitations of quasi-static approach, Introduction non-quasi-static models. 2026-12-11(五) |
| 第 15 週 | Industry-standard compact model features and tests: Parameter binning, Instance parameters vs model parameters, Local parameter fitting vs global parameter fitting, Benchmarking tests. 2026-12-18(五) |
| 第 16 週 | Final exam. 2026-12-25(五) |
1. Y. Tsividis and C. McAndrew, "Operation and Modeling of the MOS Transistor", Oxford Univ. Press, 2010 2. G. Gildenblat, "Compact Modeling: Principles, Techniques and Applications", Springer, 2010 3. W. Liu and C. Hu, "Bsim4 and MOSFET Modeling For IC Simulation", World Scientific Publishing Co., 2011 4. CC Enz, “Charge-based MOS transistor modeling: the EKV model for low-power and RF IC design”. John Wiley & Sons; 2006. 5. C. Hu, "Modern Semiconductor Devices for Integrated Circuits", Pearson, 2009
- 地點
- EF471
- 時間
- Monday 3-4 pm or by appointment
- 聯絡方式
- girish@nycu.edu.tw