電子與光電材料
Electronic and Optoelectronic
| 節 | 週五 |
|---|---|
2 09:00–09:50 | 電子與光電材料 3 節連堂 |
3 10:10–11:00 | |
4 11:10–12:00 |
* 根據陽明交大上課時間表所列
The course provides an introduction to optoelectronic device operation and design, which are important components in optical communication systems, consumer electronics, IT systems and atomic clocks. Assuming an electrical/electronic or physics undergraduate level background in semiconductor physics, the course begins with a recap of this essential topic, followed by the study of interaction of photons with electrons and holes in a semiconductor, leading to the realization of semiconductor photon amplifiers, LEDs, lasers, modulators, and photodetectors. A variety of designs and configurations of these devices are considered with application-specific characteristics. The course is ‘applied’ in nature.
Basic semiconductor physics
無備註
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Class participation, discussion (30%) Mid-term test (30%) Final exam (40%)
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| 週次 | 主題 |
|---|---|
| 第 1 週 | Introduction lecture, Energy bands in solids, the E-k diagram 2026-09-11(五) |
| 第 2 週 | Density of states I, Density of states II, Density of states in a Quantum well 2026-09-18(五) |
| 第 3 週 | Occupation Probability & Carrier Concentration, Fermi Level, Quasi Fermi Levels 2026-09-25(五) |
| 第 4 週 | Semiconductor Materials, Semiconductor Heterostructures-Lattice-Matched Layers, Strained-Layer Epitaxy and Quantum Well Structures 2026-10-02(五) |
| 第 5 週 | Bandgap Engineering, Heterostructure p-n junctions, Schottky Junctions & Ohmic Contacts 2026-10-09(五) |
| 第 6 週 | Fabrication of Heterostructure Devices, Interaction of Photons with Electrons and Holes in a Semiconductor, 2026-10-16(五) |
| 第 7 週 | Optical Joint Density of States, and Probabilities of Emission and Absorption, Rates of Emission and Absorption, Amplification by Stimulated Emission 2026-10-23(五) |
| 第 8 週 | The Semiconductor (Laser) Amplifier, Absorption Spectrum of Semiconductors, Gain and Absorption Spectrum of Quantum Well Structures 2026-10-30(五) |
| 第 9 週 | Mid-term test 2026-11-06(五) |
| 第 10 週 | Electro-absorption Modulator - Principle of Operation and device configuration, Light emitting diode - 1 Device structure and parameters, Light emitting diode-II Device Characteristics 2026-11-13(五) |
| 第 11 週 | Light emitting diode-III Output Characteristics, Light emitting diode-IV Modulation Bandwidth, Light emitting diode-V Material and Applications 2026-11-20(五) |
| 第 12 週 | Laser Basics, Semiconductor Laser-I Device Structure, Semiconductor Laser-II Output Characteristics, 2026-11-27(五) |
| 第 13 週 | Semiconductor Laser-III Single Frequency Lasers, Vertical cavity Surface Emitting Laser (VCSEL), Quantum Well Laser, 2026-12-04(五) |
| 第 14 週 | General Characteristics of Photodetectors, Responsivity & Impulse Response, Photoconductors 2026-12-11(五) |
| 第 15 週 | Semiconductor Photo-Diodes-I: PIN Diode, Semiconductor Photo-Diodes-II: APD, Other Photodetectors, 2026-12-18(五) |
| 第 16 週 | Final exam 2026-12-25(五) |
B. E. A. Saleh and M. C. Teich, Fundamentals of Photonics, John Wiley & Sons, Inc., 2 nd Ed. (2007), Ch.16, 17, and 18. G. Ghione, Semiconductor Devices for High-Speed Optoelectronics, Cambridge University Press (2009) A. Yariv and P. Yeh, Photonics: Optical Electronics in Modern Communication, Oxford University Press (2007), 6 th Ed., Ch.15-17. G. Keiser, Optical Fiber Communications, McGraw-Hill Inc., 3 rd Ed. (2000), Ch.4, P. Bhattacharya, Semiconductor Optoelectronic Devices, Prentice Hall of India (1995). J. Singh, Semiconductor Optoelectronics: Physics and Technology, McGraw-Hill Inc. (1995). Greg Parker, Introductory Semiconductor Device Physics, Prentice Hall, 1994
- 地點
- By appointment
- 時間
- By appointment
- 聯絡方式
- ntumilty@nctu.edu.tw