半導體物理及元件
Semiconductor Physics and Devices
| 節 | 週一 |
|---|---|
6 14:20–15:10 | 半導體物理及元件 A305（光復） 3 節連堂 |
7 15:30–16:20 | |
8 16:30–17:20 |
* 根據陽明交大上課時間表所列
This course provides a comprehensive knowledge of semiconductor devices, which have been instrumental in the development of Ultra-Large-Scale Integration (ULSI) systems. It aims to equip students with a thorough understanding of fundamental semiconductor device physics and its practical applications. The curriculum encompasses introductory concepts, MOS capacitors, BJT/HBT, long-channel MOSFETs, short-channel MOSFETs, and their applications. Designed specifically for electrical/electronic engineering students, this course assumes a foundational knowledge of semiconductor device physics and technologies. Through an in-depth exploration of semiconductor device physics, students will acquire a profound understanding of the underlying principles governing the behavior and functionality of these devices. Moreover, the course emphasizes the practical applications of semiconductor devices, illustrating their significance in diverse electronic systems. Through real-world examples and case studies, students will develop an appreciation for the pivotal role semiconductor devices play in modern technology. In summary, this course serves as an invaluable resource for electrical/electronic engineering students seeking to deepen their understanding of semiconductor device physics and its practical applications. Upon completion, students will possess a solid foundation in semiconductor device principles and gain insights into the diverse range of applications in semiconductor device technology and beyond.
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Weekly-biweekly HWs. 考試方式︰All tests are open book, open notes, calculator allowed. 考評項目其所佔總分比率︰ Homework: 20% of total score Midterm 1: 20% of total score. Midterm 2: 20% of total score. Final: 40% of total score.
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| 週次 | 主題 |
|---|---|
| 第 1 週 | Crystal structures, electronic structures, Density of states 2026-09-07(一) |
| 第 2 週 | Quantum Phenomena in Semiconductors (on line class) 2026-09-14(一) |
| 第 3 週 | The Semiconductor in Equilibrium Carrier Transport: Diffusion and Drift Current 2026-09-21(一) |
| 第 4 週 | 教師節 2026-09-28(一) |
| 第 5 週 | R-G process, minority carrier diffusive equation (MCDE), 2026-10-05(一) |
| 第 6 週 | PN Junctions: Operation principle 2026-10-12(一) |
| 第 7 週 | Midterm 1 PN Junctions, Forward and Reverse Bias, I-V Characteristics 2026-10-19(一) |
| 第 8 週 | 台灣光復節 補假 2026-10-26(一) |
| 第 9 週 | NonIdeal PN junctions Metal-Semiconductor Junctions, 2026-11-02(一) |
| 第 10 週 | MOS capacitors -- Principles of MOS Capacitors& 2026-11-09(一) |
| 第 11 週 | MOS capacitors -- Discrepancies from ideal MOS capacitor, Flat-band voltage, threshold voltage, Applications of C-V measurement, doping concentration, gate oxide quality monitoring 2026-11-16(一) |
| 第 12 週 | Midterm Exam 2 Long channel MOSFET—operation principle, Simplified Bulk-Charge Model, 2026-11-23(一) |
| 第 13 週 | Long channel MOSFET—Threshold Voltage, Drain Current Modeling in Sub-threshold 2026-11-30(一) |
| 第 14 週 | Short channel MOSFET—Velocity Saturation, Drain Current Modeling in Short Channel, Saturation Modeling. 2026-12-07(一) |
| 第 15 週 | Self-reading Week 2026-12-14(一) |
| 第 16 週 | Final exam 2026-12-21(一) |
Semiconductor Physics And Devices: Basic Principles, by Donald A. Neamen, 4th Edition, McGraw-Hill; Physics of Semiconductor Devices by Simon M. Sze and Kwok K. Ng: Wiley; 4th edition
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